Semiconductor structure and method for forming the same

Abstract

A method for forming a semiconductor structure is provided. The method includes forming a first fin structure in a first p-type device region and a second fin structure in a second p-type device region. Each of the first fin structure and the second fin structure includes alternatingly stacking first semiconductor layers and second semiconductor layers. The method also includes etching the first fin structure and the second fin structure to form a first recess and a second recess, respectively, forming a first patterned mask layer to cover the second p-type device region, laterally recessing the second semiconductor layers of the first fin structure to form first notches, removing the first patterned mask layer, forming a first p-type source/drain feature in the first recess and the notches, and forming a second p-type source/drain feature in the second recess.