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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yu-Xuan Huang

This inventor holds 83 USPTO granted patents and 41 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Realtek Semiconductor Inc.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Xuan Huang. Retrieved from https://idiyas.com/inventor/yu-xuan-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 83 

% Patents Active = 95.2

Average Co-Inventor Count = 4.5

ph-index = 5

Forward Citations = 98(Granted Patents)

Forward Citations (Not Self Cited) = 49(Dec 10, 2025)


Location History:

  • Hsinchu County, TW (2019)
  • Zhubei, TW (2021)
  • Hsin-Chu, TW (2016 - 2024)

Company Filing History:

goldMedal71 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal7 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents
bronzeMedal5 out of 3,309 
 
Realtek Semiconductor Inc.
 patents

Years Active: 2016-2026

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Areas of Expertise:
Nanosheet Transistor
Backside Interconnection
Integrated Circuit
High-Voltage Transistor
Field Effect Transistor
Decoupling Capacitor
Stacking CMOS
Buried Metal Track
Backside Power Rail
Double-Sided Interconnect
Self-Aligned Etch
Asymmetric Source Drain
83 patents (USPTO):Explore Patents
1. 12765000 - Semiconductor structure and method for forming the same (2026-10-13),
2. 12751266 - Transistor gate contacts and methods of forming the same (2026-09-29),
3. 12701772 - Semiconductor structure with different distances between gates and source contacts, and method of manufacturing the same (2026-08-04),
4. 12696512 - Semiconductor device and method for forming the same (2026-07-28),
5. 12660600 - Structure and method for transistors having backside power rails (2026-06-16),
6. 12653022 - Vertical transistors occupying reduced chip area and the methods forming the same (2026-06-09),
7. 12641873 - Integrated circuit structure and method for fabricating the same (2026-05-26),
8. 12641830 - Vertical self aligned gate all around transistor (2026-05-26),
9. 12635186 - Multigate devices with varying channel layers (2026-05-19),
10. 12604515 - Semiconductor device structure with inner spacer layer (2026-04-14),
11. 12593504 - Transistors with varying width nanosheet (2026-03-31),
12. 12568648 - Backside source/drain contacts and methods of forming the same (2026-03-03),
13. 12519009 - Replacement material for backside gate cut feature (2026-01-06),
14. 12506078 - Semiconductor devices with front side to backside conductive paths and methods of fabrication thereof (2025-12-23),
15. 12471353 - Gate-all around transistor with isolating feature under source/drain (2025-11-11),

Title: Innovations by Yu-Xuan Huang: A Trailblazer in Integrated Circuit Technologies

Introduction

Yu-Xuan Huang, based in Hsinchu, Taiwan, has established himself as a prominent figure in the field of integrated circuit (IC) technology, holding an impressive total of 59 patents. His work reflects a commitment to advancing electronic devices through innovative solutions that enhance performance and efficiency.

Latest Patents

Among his latest developments are two significant patents:

1. **Hybrid Cell-Based Device, Layout, and Method**: This integrated circuit device features a unique layout comprising a first plurality of active areas that extend in a first direction, with a defined pitch in a second perpendicular direction. The second plurality of active areas, also extending in the same direction, is offset from the first group, establishing a specific ratio of pitches of 3:2.

2. **Integrated Circuit Structure with Backside Via**: This design incorporates a sophisticated arrangement consisting of a gate structure, source and drain epitaxial structures, and a front-side interconnection structure. The innovative aspect is the inclusion of a backside dielectric layer and a regrowth layer, which seamlessly integrates a backside via that overlaps the regrowth layer, optimizing connections and functionality.

Career Highlights

Yu-Xuan Huang has made significant contributions to renowned companies such as Taiwan Semiconductor Manufacturing Company Limited and Realtek Semiconductor Inc. His career is characterized by his dedication to the evolution of ICs, which are pivotal in various electronic applications.

Collaborations

Working alongside talented professionals like Ching-Wei Tsai and Kuan-Lun Cheng, Huang has fostered innovation through collaboration. Their combined expertise enhances the development of cutting-edge technologies, pushing the boundaries of what is achievable in semiconductor design.

Conclusion

With 59 patents to his name, Yu-Xuan Huang stands at the forefront of innovation in integrated circuit technology. His latest patents showcase the ingenuity and advancement that define his work, solidifying his reputation as a leading inventor in the semiconductor industry. The collaborations and experiences he has gained in esteemed organizations further contribute to a legacy that inspires future innovations in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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