The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Mar. 22, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Xuan Huang, Hsinchu, TW;
Chi-Yu Lu, New Taipei, TW;
Shang-Wen Chang, Hsinchu County, TW;
Guan-Lin Chen, Hsinchu County, TW;
Cheng-Chi Chuang, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming an epitaxial stack including a first sacrificial layer, a channel layer, and a second sacrificial layer over a semiconductor substrate; patterning the epitaxial stack into a fin structure such that opposite first ends of the channel layer are exposed; recessing the opposite first ends of the channel layer; forming first dummy spacers on the recessed opposite first ends of the channel layer; forming an isolation structure in the fin structure; recessing a top surface of the isolation structure to a position lower than a bottom surface of the channel layer, such that opposite second ends of the channel layer are exposed; recessing the opposite second ends of the channel layer; forming second dummy spacers on the recessed opposite second ends of the channel layer; and replacing the first dummy spacers and the second dummy spacers with a metal gate structure.