logo

For the Inventor, By the Inventor

Jhubei, Taiwan

Shang-Wen Chang

This inventor holds 69 USPTO granted patents and 35 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Industrial Technology Research Institute. Active years: 2004-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shang-Wen Chang. Retrieved from https://idiyas.com/inventor/shang-wen-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 69 

% Patents Active = 97.1

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 63(Granted Patents)

Forward Citations (Not Self Cited) = 32(Dec 10, 2025)


Location History:

  • Zhubei, TW (2020)
  • Hsinchu County, TW (2018 - 2023)
  • Hsinchu, TW (2004 - 2024)
  • Jhubei, TW (2010 - 2024)

Company Filing History:

goldMedal64 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal4 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents
bronzeMedal1 out of 9,307 
 
Industrial Technology Research Institute
 patents

Years Active: 2004-2026

Loading Chart...
Areas of Expertise:
Semiconductor Devices
Interconnect Structures
FinFET Technology
Power Rail Designs
Stacked Transistors
Contact Structures
Amphi-FET Structure
Integrated Circuits
Dual-Side Power Rail
Field-Effect Transistors
Hybrid Standard Cell
Self-Aligned Interconnect
69 patents (USPTO):Explore Patents
1. 12713883 - SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME (2026-08-18),
2. 12707963 - Semiconductor devices including backside capacitors and methods of manufacture (2026-08-11),
3. 12677705 - Structure and formation method of package with integrated chips (2026-07-07),
4. 12660600 - Structure and method for transistors having backside power rails (2026-06-16),
5. 12653022 - Vertical transistors occupying reduced chip area and the methods forming the same (2026-06-09),
6. 12641873 - Integrated circuit structure and method for fabricating the same (2026-05-26),
7. 12593504 - Transistors with varying width nanosheet (2026-03-31),
8. 12588492 - Power rail and signal line arrangement in integrated circuits having stacked transistors (2026-03-24),
9. 12588491 - Power rail and signal line arrangement in integrated circuits having stacked transistors (2026-03-24),
10. 12550370 - Semiconductor device and manufacturing method thereof (2026-02-10),
11. 12538782 - Semiconductor device including recessed interconnect structure (2026-01-27),
12. 12484254 - Integrated circuit structure with backside via rail (2025-11-25),
13. 12471377 - Method of forming semiconductor device having segmented interconnect (2025-11-11),
14. 12453114 - Semiconductor transistor devices having double-sided interconnect structures (2025-10-21),
15. 12408440 - Method of making amphi-FET structure and method of designing (2025-09-02),

Title: The Innovative Journey of Shang-Wen Chang

Introduction: Shang-Wen Chang, a pioneering inventor hailing from Jhubei, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Shang-Wen Chang holds several patents in the realm of electronics and semiconductor technology, showcasing his continuous dedication to pushing the boundaries of innovation.

Career Highlights: Throughout his illustrious career, Shang-Wen Chang has been instrumental in developing cutting-edge technologies that have revolutionized the industry. His keen insight and inventive spirit have led to the creation of solutions that have enhanced efficiency and performance in various applications.

Collaborations: Shang-Wen Chang has collaborated with leading research institutions and tech companies to further his inventions and bring them to the market. His partnerships have been crucial in bridging the gap between theoretical concepts and practical implementations.

Conclusion: Shang-Wen Chang's relentless pursuit of innovation and his remarkable contributions to the field have solidified his position as a trailblazer in the world of technology. His inventive prowess continues to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…