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For the Inventor, By the Inventor

Jhubei, Taiwan

Shang-Wen Chang

USPTO Granted Patents = 58 

Average Co-Inventor Count = 4.0

ph-index = 3

Forward Citations = 42(Granted Patents)

Forward Citations (Not Self Cited) = 32(Dec 10, 2025)


Location History:

  • Zhubei, TW (2020)
  • Hsinchu County, TW (2018 - 2023)
  • Hsinchu, TW (2004 - 2024)
  • Jhubei, TW (2010 - 2024)

Company Filing History:

goldMedal57 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 9,144 
 
Industrial Technology Research Institute
 patents

Years Active: 2004-2025

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Areas of Expertise:
Integrated Circuit Structure
Semiconductor Device
FinFET SRAM Cells
Amphi-FET Structure
Self-Aligned Interconnect
Dual-Side Power Rail
Contact Structures
Recessed Interconnect
Backside Power Rail
Transistor Devices
Field-Effect Transistors
Hybrid Standard Cell
58 patents (USPTO):Explore Patents
1. 12484254 - Integrated circuit structure with backside via rail (2025-11-25),
2. 12471377 - Method of forming semiconductor device having segmented interconnect (2025-11-11),
3. 12453114 - Semiconductor transistor devices having double-sided interconnect structures (2025-10-21),
4. 12408440 - Method of making amphi-FET structure and method of designing (2025-09-02),
5. 12400950 - Interconnect structure and methods thereof (2025-08-26),
6. 12368078 - Dual-side power rail design and method of making same (2025-07-22),
7. 12363879 - FinFET SRAM cells with reduced fin pitch (2025-07-15),
8. 12327765 - Semiconductor device with contact structures (2025-06-10),
9. 12272605 - Methods of forming contact features in field-effect transistors (2025-04-08),
10. 12266594 - Method of making semiconductor device having self-aligned interconnect structure (2025-04-01),
11. 12237233 - Backside power rail for physical failure analysis (PFA) (2025-02-25),
12. 12165926 - FinFET device structure having dielectric features between a plurality of gate electrodes and methods of forming the same (2024-12-10),
13. 12148745 - Integrated hybrid standard cell structure with gate-all-around device (2024-11-19),
14. 12113066 - Integrated circuit device including a power supply line and method of forming the same (2024-10-08),
15. 12107012 - Method for forming fin field effect transistor device structure (2024-10-01),

Title: The Innovative Journey of Shang-Wen Chang

Introduction: Shang-Wen Chang, a pioneering inventor hailing from Jhubei, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Shang-Wen Chang holds several patents in the realm of electronics and semiconductor technology, showcasing his continuous dedication to pushing the boundaries of innovation.

Career Highlights: Throughout his illustrious career, Shang-Wen Chang has been instrumental in developing cutting-edge technologies that have revolutionized the industry. His keen insight and inventive spirit have led to the creation of solutions that have enhanced efficiency and performance in various applications.

Collaborations: Shang-Wen Chang has collaborated with leading research institutions and tech companies to further his inventions and bring them to the market. His partnerships have been crucial in bridging the gap between theoretical concepts and practical implementations.

Conclusion: Shang-Wen Chang's relentless pursuit of innovation and his remarkable contributions to the field have solidified his position as a trailblazer in the world of technology. His inventive prowess continues to inspire future generations of inventors to push the boundaries of what is possible.

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