The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Mar. 15, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shang-Wen Chang, Jhubei City, TW;
Cheng-Chi Chuang, New Taipei City, TW;
Ching-Wei Tsai, Hsinchu City, TW;
Yi-Hsun Chiu, Zhubei City, TW;
Yu-Xuan Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a vertical transistor, and the method includes forming a vertical semiconductor bar over a substrate, forming a gate dielectric and a gate electrode encircling the vertical semiconductor bar, forming a first source/drain region over a top surface of the vertical semiconductor bar, removing the substrate to reveal a bottom surface of the vertical semiconductor bar; and forming a second source/drain region contacting the bottom surface of the vertical semiconductor bar. The method further includes forming a backside power line, with the backside power line being on a bottom side of the vertical semiconductor bar. The backside power line is connected to the second source/drain region.