The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Sep. 18, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Guo-Huei Wu, Hsinchu, TW;
Ching-Wei Tsai, Hsinchu, TW;
Shang-Wen Chang, Hsinchu, TW;
Li-Chun Tien, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes fabricating a first-type active-region semiconductor, depositing a layer of dielectric material covering the first-type active-region semiconductor structure, and fabricating a second-type active-region semiconductor structure atop the layer of dielectric material. The method includes forming a front-side power rail and a front-side signal line extending in the first direction in a front-side metal layer overlying a first insulating material that covers the first-type active-region semiconductor. The front-side power rail is conductively connected to a second source conductive segment intersecting the second-type active-region semiconductor structure. The method includes forming a back-side metal layer on a backside of the substrate, and forming a back-side power rail and a back-side signal line extending in the first direction in the back-side metal layer. The back-side power rail is conductively connected to a first source conductive segment intersecting the first-type active-region semiconductor structure.