Integrated circuit structure with backside via rail

Abstract

An IC structure includes a first transistor, first gate spacers, a second transistor, second gate spacers, a backside metal line, and a metal contact. The first transistor includes first source/drain regions and a first gate structure between the first source/drain regions. The first gate spacers space apart the first source/drain regions from the first gate structure. The second transistor comprises second source/drain regions and a second gate structure between the second source/drain regions. The second gate spacers space apart the second source/drain regions from the second gate structure. The first gate spacers and the second gate spacers extend along a first direction. The backside metal line extends between the first transistor and the second transistor along a second direction. The first metal contact wraps around one of the second source/drain regions and has a protrusion interfacing the backside metal line.