The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yi-Bo Liao, Hsinchu, TW;

Yu-Xuan Huang, Hsinchu, TW;

Hou-Yu Chen, Hsinchu, TW;

Kuan-Lun Cheng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 21/0259 (2013.01); H10D 30/031 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/01 (2025.01); H10D 64/017 (2025.01); H10D 64/62 (2025.01);
Abstract

Embodiments of the present disclosure provide semiconductor devices having a front side to backside conductive path through a source/drain feature. In some embodiments, the front side to backside conductive path may be formed through a source/drain feature in a standard cell. The other embodiments, the front side to backside conductive path is formed through a source/drain feature in a filler cell. The front side to backside conductive path enables flexible routing for local connections, backside signal connections, and/or backside power rail connection.


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