The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
May. 02, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Xuan Huang, Hsinchu, TW;
Hou-Yu Chen, Hsinchu, TW;
Cheng-Ting Chung, Hsinchu, TW;
Jin Cai, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming vertical gate all around transistors includes forming stack of semiconductor layers on a lower source/drain region. The stack of semiconductor layers includes a first layer, a second layer on the first layer, and a third layer on the second layer. The first and third layers have substantially identical compositions and are selectively etchable with respect to the second layer. The first and second layers can be selectively removed and replaced with inner spacers. The second layer can be selectively removed and replaced with a gate electrode.