Taiwan Semiconductor Manufacturing Comp. Ltd.

Realtek Semiconductor Inc.

Yu-Xuan Huang

Ching-Wei Tsai

Kuan-Lun Cheng

Hou-Yu Chen

Yi-Bo Liao

Chih-Hao Wang

Yi-Hsun Chiu

Cheng-Ting Chung

Pei-Yu Wang

Yi-Hsiung Lin

Hui-Zhong Zhuang

Shang-Wen Chang

Ru-Gun Liu

Chih-Ming Lai

Ting-Wei Chiang

Shih-Ming Chang

Jung-Chan Yang

Guo-Huei Wu

Yu-Jung Chang

Pochun Wang

Ya-Chi Chou

Jiann-Tyng Tzeng

Cheng-Chi Chuang

Liang-Wei Huang

Wei-Cheng Lin

Kuo-Ji Chen

Wei-An Lai

Wei Ju Lee

Wang-Chun Huang

Huan-Chieh Su

Jam-Wem Lee

Chung-Hui Chen

Chun-Yuan Chen

Jia-Chuan You

Wai-Yi Lien

Chun-Fu Cheng

Hou-yu Chen

Sai-Hooi Yeong

Kuo-Cheng Chiang

Yih Wang

Jung-Hung Chang

Min Cao

Pei-Hsun Wang

Lo-Heng Chang

Chung-Wei Wu

Kuan-lun Cheng

Chia-en Huang

Lipen Yuan

Yan-Hao Chen

Ming Chian Tsai

Shih-Wei Peng

Chia-En Huang

Li-Zhen Yu

Zhi-Chang Lin

Chung-Cheng Wu

Shih-Hsiung Huang

Te-Hsin Chiu

Jin Cai

Liang-Huan Lei

Chia-Lin Chang

Tao Yi Hung

Huan-Chung Chen

Guo-Yung Chen

A semiconductor structure includes a substrate, a first gate structure and a second gate structure disposed over the substrate, and an isolation feature extending through the substrate and disposed between the first gate structure and the second gate structure. A top surface of the isolation feature is above a topmost surface of the first gate structure.

Replacement material for backside gate cut feature

Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes semiconductor material layers stacked above a substrate along a first direction and a gate structure wrapping around the semiconductor material layers. The semiconductor structure further includes an epitaxial structure coupled to the semiconductor material layers in a second direction that is different from the first direction and a SiGe-containing layer located below the epitaxial structure. In addition, a material of the SiGe-containing layer is different from a material of the epitaxial structure, the SiGe-containing layer comprises a first portion with a first thickness in the first direction, and a second portion with a second thickness in the first direction, and the second thickness is smaller than the first thickness.

Gate-all around transistor with isolating feature under source/drain

Semiconductor device including a first transistor structure; a first interconnect structure on a front-side of the first transistor structure; and a second interconnect structure on a backside of the first transistor structure, the second interconnect structure including a first dielectric layer on the backside of the first transistor structure; a contact extending through the first dielectric layer to a source/drain region of the first transistor structure; and first spacers along sidewalls of the contact between the contact and the first dielectric layer, sidewalls of the first spacers facing the first dielectric layer being aligned with sidewalls of the source/drain region of the first transistor structure.

Semiconductor transistor devices having double-sided interconnect structures

A method includes forming a first semiconductor layer over a substrate; forming a dummy material covering a first sidewall of the first semiconductor layer; forming source/drain epitaxy structures over the substrate and in contact with the first semiconductor layer; forming an interfacial layer on a top surface and a second sidewall of the first semiconductor layer that are uncovered by the dummy material; removing the dummy material to expose the first sidewall of the first semiconductor layer; forming a second semiconductor layer on the first sidewall of the first semiconductor layer after removing the dummy material, in which the second semiconductor layer and the source/drain epitaxy structures have different conductivity types; and forming a gate electrode over the interfacial layer.

Semiconductor device and method for forming the same

A semiconductor structure includes a power rail, a first source/drain feature disposed over the power rail, a via connecting the power rail to the first source/drain feature; an isolation feature disposed over the first source/drain feature, and a second source/drain feature disposed over the isolation feature, where the first and the second source/drain features are of opposite conductivity types.

Stacking CMOS structure

A method of fabricating a semiconductor device includes providing a dummy structure including channel layers disposed over a frontside of a substrate, inner spacers disposed between adjacent channels of the channel layers and at lateral ends of the channel layers, and a gate structure interposing the plurality of channel layers. The dummy structure is disposed at an active edge adjacent to an active region. Perform an etching process to etch the gate structure and the plurality of channel layers to form a cut region along the active edge. Deposit a conductive material in the cut region to form a conductive feature. The method further includes thinning the substrate from a backside of the substrate to expose the conductive feature and forming a backside metal wiring layer on the backside of the substrate. The backside metal wiring layer is in electrical connection with the conductive feature.

Semiconductor device with backside power rail

The present disclosure is directed to methods for the formation of high-voltage nano-sheet transistors and low-voltage gate-all-around transistors on a common substrate. The method includes forming a fin structure with first and second nano-sheet layers on the substrate. The method also includes forming a gate structure having a first dielectric and a first gate electrode on the fin structure and removing portions of the fin structure not covered by the gate structure. The method further includes partially etching exposed surfaces of the first nano-sheet layers to form recessed portions of the first nano-sheet layers in the fin structure and forming a spacer structure on the recessed portions. In addition, the method includes replacing the first gate electrode with a second dielectric and a second gate electrode, and forming an epitaxial structure abutting the fin structure.

High-voltage nano-sheet transistor

A device includes a substrate, a gate structure, a capping layer, a source/drain region, a source/drain contact, and an air spacer. The gate structure wraps around at least one vertical stack of nanostructure channels over the substrate. The capping layer is on the gate structure. The source/drain region abuts the gate structure. The source/drain contact is on the source/drain region. The air spacer is between the capping layer and the source/drain contact.

Field effect transistor with air spacer and method

In an embodiment, a device includes: a first fin; a gate structure over the first fin; a first source/drain region adjacent the gate structure; an etch stop layer over the first source/drain region; a conductive line over the etch stop layer, the conductive line isolated from the first source/drain region by the etch stop layer, a top surface of the conductive line being coplanar with a top surface of the gate structure; and a power rail contact extending through the first fin, the power rail contact connected to the first source/drain region.

Semiconductor devices

An integrated circuit includes a first and second active region, a first conductive structure, an insulating region, a set of gates and a set of contacts. The first and second active region are in a substrate, extend in a first direction, are located on a first level, and being separated from one another in a second direction. The first conductive structure extends in the first direction, is located on the first level, and is between the first and second active region. The insulating region is located on at least the first level, and is between the first and second active region and the first conductive structure. The set of gates extend in the second direction, overlap the first conductive structure, and is located on a second level. The set of contacts extend in the second direction, overlap the first conductive structure, and is located on the second level.

Integrated circuit and method of manufacturing same

One aspect of this description relates to a method for operating an integrated circuit (IC) manufacturing system. The method includes placing a first nano-sheet structure within a IC layout diagram. The first nano-sheet structure has a first width. The method includes abutting a second nano-sheet structure with the first nano-sheet structure. The second nano-sheet structure has a second width. The second width is less than the first width. The method includes generating and storing the IC layout diagram in a storage device.

Variable width nano-sheet field-effect transistor cell structure

An integrated circuit (IC) device includes a first plurality of active areas extending in a first direction and having a first pitch in a second direction perpendicular to the first direction, and a second plurality of active areas extending in the first direction, offset from the first plurality of active areas in the first direction, and having a second pitch in the second direction. A ratio of the second pitch to the first pitch is 3:2.

Hybrid cell-based device, layout, and method

An integrated circuit (IC) structure includes a gate structure, a source epitaxial structure, a drain epitaxial structure, a front-side interconnection structure, a backside dielectric layer, an epitaxial regrowth layer, and a backside via. The source epitaxial structure and the drain epitaxial structure are respectively on opposite sides of the gate structure. The front-side interconnection structure is over a front-side of the source epitaxial structure and a front-side of the drain epitaxial structure. The backside dielectric layer is over a backside of the source epitaxial structure and a backside of the drain epitaxial structure. The epitaxial regrowth layer is on the backside of a first one of the source epitaxial structure and the drain epitaxial structure. The backside via extends through the backside dielectric layer and overlaps the epitaxial regrowth layer.

Integrated circuit structure with backside via

A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The substrate has a base and a multilayer structure over the base, and the gate stack wraps around the multilayer structure. The method includes partially removing the multilayer structure, which is not covered by the gate stack. The multilayer structure remaining under the gate stack forms a multilayer stack, and the multilayer stack includes a sacrificial layer and a channel layer over the sacrificial layer. The method includes partially removing the sacrificial layer to form a recess in the multilayer stack. The method includes forming an inner spacer layer in the recess and a bottom spacer over a sidewall of the channel layer. The method includes forming a source/drain structure over the bottom spacer. The bottom spacer separates the source/drain structure from the channel layer.

Semiconductor device structure and method for forming the same

A semiconductor structure includes a first transistor having a first source/drain (S/D) feature and a first gate; a second transistor having a second S/D feature and a second gate; a multi-layer interconnection disposed over the first and the second transistors; a signal interconnection under the first and the second transistors; and a power rail under the signal interconnection and electrically isolated from the signal interconnection, wherein the signal interconnection electrically connects one of the first S/D feature and the first gate to one of the second S/D feature and the second gate.

Backside signal interconnection

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Hsinchu, Taiwan

Yu-Xuan Huang