The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jul. 23, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shih-Cheng Chen, New Taipei, TW;
Zhi-Chang Lin, Hsinchu County, TW;
Jung-Hung Chang, Changhua County, TW;
Lo-Heng Chang, Hsinchu, TW;
Chien-Ning Yao, Hsinchu, TW;
Kuo-Cheng Chiang, Hsinchu County, TW;
Chih-Hao Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Embodiments of the present disclosure relate to an un-doped or low-doped epitaxial layer formed below the source/drain features. The un-doped or low-doped epitaxial layer protects the source/drain features from damage during replacement gate processes, and also prevent leakage currents in the mesa device. A semiconductor device is disclosed. The semiconductor device includes an epitaxial feature having a dopant of a first concentration, and a source/drain feature in contact with the epitaxial feature. The source/drain feature comprises the dopant of a second concentration, and the second concentration is higher than the first concentration.