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For the Inventor, By the Inventor

Hsinchu, Taiwan

Lo-Heng Chang

USPTO Granted Patents = 42 

Average Co-Inventor Count = 6.2

ph-index = 2

Forward Citations = 32(Granted Patents)


Company Filing History:

goldMedal42 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2021-2025

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Areas of Expertise:
Semiconductor Devices
Manufacturing Methods
Gate All Around Transistors
Backside Gate Isolation
Dielectric Liners
Multi-Gate Devices
Nanostructure Devices
Epitaxial Structures
Backside Power Rail
Inner Spacers
Reduction of Gate-Drain Capacitance
Facet Source/Drain Features
42 patents (USPTO):Explore Patents
1. 12501671 - Semiconductor device and manufacturing method thereof (2025-12-16),
2. 12471315 - Semiconductor device including spacers on sides of dielectric structure and manufacturing method thereof (2025-11-11),
3. 12457798 - Dielectric liner for field effect transistors (2025-10-28),
4. 12446305 - Uniform gate width for nanostructure devices (2025-10-14),
5. 12389618 - Semiconductor transistor device includes backside via electrically connecting epitaxial source/drain structures and method for forming the same (2025-08-12),
6. 12382666 - Enlargement of GAA nanostructure (2025-08-05),
7. 12349379 - Semiconductor devices and methods of manufacture (2025-07-01),
8. 12347775 - Semiconductor devices with backside power rail and methods of fabrication thereof (2025-07-01),
9. 12302607 - Backside gate contact (2025-05-13),
10. 12300732 - Gate all around transistor with dual inner spacers (2025-05-13),
11. 12278273 - Semiconductor device with backside gate isolation structure and method for forming the same (2025-04-14),
12. 12243780 - Semiconductor device structure and method for forming the same (2025-03-04),
13. 12107011 - Method for fabricating a semiconductor device (2024-10-01),
14. 12046516 - Semiconductor device with gate cut feature and method for forming the same (2024-07-23),
15. 11996482 - Semiconductor device (2024-05-28),

Title: Lo-Heng Chang: Pioneering Innovation in Semiconductor Technology

Introduction:

Inventor Lo-Heng Chang, based in Hsinchu, Taiwan, is a trailblazer in the world of inventions, with a remarkable portfolio of 25 patents. His relentless pursuit of innovation and passion for pushing the boundaries have established him as a groundbreaking figure in the field.

Latest Patents:

Among his latest patents is the "Dielectric Liner for Field Effect Transistors," a semiconductor structure that incorporates a dielectric liner to enhance performance. Additionally, he has developed the "Gate All Around Transistor with Dual Inner Spacers," a method that involves forming semiconductor nanosheets and inner spacers for improved transistor functioning.

Career Highlights:

Lo-Heng Chang is a key figure at Taiwan Semiconductor Manufacturing Company Limited (TSMC), a prominent player in the semiconductor industry. His expertise and innovative contributions have significantly advanced the company's technological capabilities and solidified its position in the market.

Collaborations:

Throughout his career, Chang has collaborated closely with esteemed colleagues such as Chih-Hao Wang and Jung-Hung Chang. Their combined efforts have led to groundbreaking advancements in semiconductor technology, further establishing Chang as a leader in the field.

Conclusion:

Inventor Lo-Heng Chang's unwavering commitment to innovation and his groundbreaking work in semiconductor technology have positioned him as a true pioneer in the industry. His dedication to pushing technological boundaries and quest for excellence continue to inspire future generations of inventors and innovators globally.

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