The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Jun. 29, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Li-Zhen Yu, New Taipei, TW;
Lin-Yu Huang, Hsinchu, TW;
Huan-Chieh Su, Changhua County, TW;
Lo-Heng Chang, Hsinchu, TW;
Meng-Huan Jao, Taichung, TW;
Chih-Hao Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A device includes a channel layer, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a front-side interconnection structure, and a backside via. The gate structure is across the channel layer. The first source/drain epitaxial structure and the second source/drain epitaxial structure are on opposite sides of the gate structure and are connected to the channel layer. The front-side interconnection structure is on a front-side of the first source/drain epitaxial structure. The backside via is connected to a backside of the first source/drain epitaxial structure. A backside surface of the first source/drain epitaxial structure is at a height between a height of a backside surface of the backside via and a height of a backside surface of the gate structure.