The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Jan. 30, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Zhi-Chang Lin, Zhubei, TW;

Shih-Cheng Chen, Taipei, TW;

Kuo-Cheng Chiang, Zhubei, TW;

Kuan-Ting Pan, Taipei, TW;

Jung-Hung Chang, Changhua County, TW;

Lo-Heng Chang, Hsinchu, TW;

Chien Ning Yao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 84/0147 (2025.01);
Abstract

The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a stacked fin structure, a fin bottom portion below the stacked fin structure, and an isolation layer between the stacked fin structure and the bottom fin portion. The semiconductor structure further includes a dielectric liner in contact with an end of the stacked fin structure and a spacer structure in contact with the dielectric liner.


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