The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Apr. 13, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shih-Chuan Chiu, Hsinchu, TW;
Lo-Heng Chang, Hsinchu, TW;
Huan-Chieh Su, Hsinchu, TW;
Cheng-Chi Chuang, Hsinchu, TW;
Yun Ju Fan, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A device includes a substrate, a gate structure, a source/drain region, a first silicide layer, a second silicide layer and a contact. The gate structure wraps around at least one vertical stack of nanostructure channels. The source/drain region abuts the gate structure. The first silicide layer includes a first metal component on the source/drain region. The second silicide layer includes a second metal component different than the first metal component, and is on the first silicide layer. The contact is on the second silicide layer.