The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Feb. 15, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Huan-Chieh Su, Tianzhong Township, TW;
Zhi-Chang Lin, Zhubei, TW;
Li-Zhen Yu, New Taipei, TW;
Chun-Yuan Chen, Hsinchu, TW;
Lo-Heng Chang, Hsinchu, TW;
Cheng-Chi Chuang, New Taipei, TW;
Chih-Hao Wang, Baoshan Township, TW;
Lin-Yu Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor structure is provided. The semiconductor structure includes a first gate stack wrapping around first nanostructures, a second gate stack wrapping around second nanostructures, a gate isolation structure interposing between the first gate stack and the second gate stack, a first source/drain feature adjoining the first nanostructures, a second source/drain feature adjoining the second nanostructures, and a source/drain spacer structure interposing between the first source/drain feature and the second source/drain feature. The gate isolation structure covers a sidewall of the source/drain spacer structure.