Wei-Yang Lee

Taipei, Taiwan

Wei-Yang Lee

This inventor holds 219 USPTO granted patents and 100 published patent applications, primarily in Semiconductor Devices (CPC class H01L29-66545). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan University. Active years: 2009-2026.

USPTO Granted Patents = 219 

% Patents Active = 96.8

Average Co-Inventor Count = 3.9

ph-index = 9

Forward Citations = 382(Granted Patents)

Forward Citations (Not Self Cited) = 308(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Taipei, TW (2009 - 2024)
  • Hsinchu, TW (2023 - 2024)

Company Filing History:


Years Active: 2009-2026

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Areas of Expertise:
Semiconductor Structure
Gate-All-Around Transistor
Epitaxial Features
Carrier Mobility
Multi-Gate Device
Source/Drain Contacts
Integrated Circuit
FinFET Structure
Air Gap Spacer
Dielectric Spacers
Nanosheet Devices
Leakage Current Suppression
219 patents (USPTO):Explore Patents

Title: The Innovative Mind of Inventor Wei-Yang Lee

Introduction:

Wei-Yang Lee, a talented inventor hailing from Taipei, Taiwan, has made significant contributions to the field of semiconductor devices and fabrication processes. With an impressive portfolio of 145 patents, Lee continues to push the boundaries of technology and innovation.

Latest Patents:

Among his latest patents is the "Method for FinFET LDD doping," which revolutionizes semiconductor device design by incorporating advanced materials like silicon oxide, silicon nitride, and silicon oxynitride. Additionally, Lee's "Methods of forming epitaxial structures in fin-like field effect transistors" showcases his expertise in optimizing the performance of fin-like field effect transistors.

Career Highlights:

Lee's groundbreaking work has been showcased at top-tier companies such as Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) and the prestigious National Taiwan University. His dedication to research and development has led to the creation of cutting-edge technologies that drive innovation in the semiconductor industry.

Collaborations:

Throughout his career, Lee has collaborated with esteemed colleagues such as Feng-Cheng Yang and Yen-Ming Chen. Together, they have combined their expertise to tackle complex challenges in semiconductor device fabrication and design, resulting in groundbreaking inventions that shape the future of technology.

Conclusion:

Inventor Wei-Yang Lee's relentless pursuit of innovation and his unparalleled contributions to the field of semiconductor devices have solidified his reputation as a pioneer in the industry. His patents and collaborations stand as a testament to his commitment to pushing the boundaries of technological advancement and shaping the world of tomorrow.

Profile summary based on public USPTO records.
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