The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
May. 04, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Han Fan, Hsin-Chu, TW;
Chia-Pin Lin, Hsinchu County, TW;
Wei-Yang Lee, Taipei, TW;
Tzu-Hua Chiu, Hsinchu, TW;
Kuan-Hao Cheng, Hsinchu, TW;
PO-Shao Lin, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of fabricating a device includes providing a fin having a stack of epitaxial layers including a plurality of semiconductor channel layers interposed by a plurality of dummy layers. A source/drain etch process is performed to remove portions of the stack of epitaxial layers in source/drain regions to form trenches that expose lateral surfaces of the stack of epitaxial layers. A dummy layer recess process is performed to laterally etch the plurality of dummy layers to form recesses along sidewalls of the trenches. An inner spacer material is deposited along sidewalls of the trenches and within the recesses. An inner spacer etch-back process is performed to remove the inner spacer material from the sidewalls of the trenches and to remove a portion of the inner spacer material from within the recesses to form inner spacers having a dish-like region along lateral surfaces of the inner spacers.