The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jul. 03, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wei-Yang Lee, Taipei, TW;
Ting-Yeh Chen, Hsinchu, TW;
Chii-Horng Li, Hsinchu County, TW;
Feng-Cheng Yang, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/822 (2025.01); H10D 84/85 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/797 (2025.01); H10D 30/024 (2025.01); H10D 30/0245 (2025.01); H10D 30/6211 (2025.01); H10D 30/6212 (2025.01); H10D 62/822 (2025.01); H10D 84/853 (2025.01); H10D 62/151 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01);
Abstract
A method includes forming a fin in a substrate. The fin is etched to create a source/drain recess. A source/drain feature is formed in the source/drain recess, in which a lattice constant of the source/drain feature is greater than a lattice constant of the fin. An epitaxy coat is grown over the source/drain feature, in which a lattice constant of the epitaxy coat is smaller than a lattice constant of the fin.