The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Feb. 23, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Zhi-Chang Lin, Hsinchu, TW;
Ko-Feng Chen, Hsinchu, TW;
Chien-Ning Yao, Hsinchu, TW;
Chien-Hung Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a nanosheet semiconductor device includes: forming a liner layer to cover first and second fin structures, each of the fin structures including a stacked structure, a poly gate disposed on the stacked structure, and inner spacers, the stacked structure including sacrificial features covered by the inner spacers, and channel features disposed to alternate with the sacrificial features; forming a dielectric layer to cover the liner layer, the dielectric layer including an upper portion, a lower portion, and an interconnecting portion that interconnects the upper and lower portions and that laterally covers the liner layer; subjecting the upper and lower portions to a directional treatment; and removing the upper and interconnecting portions of the dielectric layer and a portion of the liner layer, to form a liner and a bottom dielectric insulator disposed on the liner.