The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Jan. 11, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Cheng Tzeng, Taipei City, TW;
Shih-Wei Peng, Hsinchu City, TW;
Ching-Yu Huang, Hsinchu City, TW;
Chun-Yen Lin, Hsinchu City, TW;
Wei-Cheng Lin, Taichung City, TW;
Jiann-Tyng Tzeng, Hsinchu City, TW;
Szuya Liao, Hsinchu County, TW;
Jui-Chien Huang, Hsinchu City, TW;
Cheng-Yin Wang, Taipei City, TW;
Ting-Yun Wu, Taipei City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An integrated circuit is provided, including a first cell. The first cell includes a first pair of active regions, at least one first gate, two first conductive segments, and a first interconnect structure. The first pair of active regions extends in a first direction and stacked on each other. The at least one first gate extends in a second direction different from the first direction, and is arranged across the first pair of active regions, to form at least one first pair of devices that are stacked on each other. The first conductive segments are coupled to the first pair of active regions respectively. The first interconnect structure is coupled to at least one of a first via or one of the two first conductive segments.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile