The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jul. 08, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jui-Chien Huang, Hsinchu, TW;
Szuya Liao, Hsinchu, TW;
Cheng-Yin Wang, Hsinchu, TW;
Shih Hao Wang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a first transistor of a first semiconductor device. The first semiconductor device includes a first channel region and a gate electrode on the first channel region. A second semiconductor device is bonded to the first semiconductor device by a bonding layer disposed between the first and second semiconductor devices. A second transistor of the second semiconductor device is formed that includes a second channel region and a second gate electrode on the second channel region. The bonding layer is disposed between the first gate electrode of the first transistor and the second gate electrode of the second transistor.