The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Jul. 06, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Cheng-Ming Lin, Kaohsiung City, TW;
Szu-Hua Chen, Tainan City, TW;
Kenichi Sano, Hsinchu, TW;
Wei-Yen Woon, Taoyuan City, TW;
Szuya Liao, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/60 (2026.01); C23C 16/40 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01); H10P 14/692 (2026.01); H10P 95/00 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6529 (2026.01); C23C 16/401 (2013.01); C23C 16/56 (2013.01); H01J 37/3244 (2013.01); H10P 14/69215 (2026.01); H10P 14/6922 (2026.01); H10P 95/062 (2026.01);
Abstract
A low thermal budget dielectric material treatment is provided. An example method of the present disclosure includes providing a semiconductor structure, depositing a dielectric material over the semiconductor structure, treating the dielectric material with a gaseous species carried in a supercritical fluid, and after the treating, reducing a thickness of the dielectric material.