The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Aug. 04, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Cheng-Ming Lin, Kaohsiung City, TW;
Szu-Hua Chen, Tainan City, TW;
Wei-Yen Woon, Taoyuan City, TW;
Szuya Liao, Zhubei Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/68 (2025.01); H10P 14/43 (2026.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 62/115 (2025.01); H10D 64/021 (2025.01); H10D 64/691 (2025.01); H10P 14/43 (2026.01);
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The method includes forming a spacer over first sidewalls of the gate stack using a first precursor. The first precursor includes a first boron- and nitrogen-containing material having a first hexagonal ring structure, the spacer has a plurality of first layers, and each first layer includes boron and nitrogen.