The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Oct. 30, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor integrated circuit (IC) that has substantially equal gate heights regardless of different pattern densities in different regions of the IC includes providing a substrate with a first pattern density in a first region of the IC and a second pattern density in a second region of the IC, forming a first polysilicon layer above the substrate, the first polysilicon layer having an uneven upper surface, forming a stop layer above the first polysilicon layer, treating the stop layer to change its etch selectivity relative to the first polysilicon layer, forming a second polysilicon layer above the stop layer, removing the second polysilicon layer, the stop layer, and a top portion of the first polysilicon layer, the remaining portion of the first polysilicon layer having a planar upper surface.