The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Oct. 13, 2011
Chun-hung Ko, Hemei Township, TW;
Jyh-huei Chen, Hsin-Chu, TW;
Ming-jie Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An embodiment is a semiconductor structure. The semiconductor structure comprises an epitaxial region, a gate structure, a contact spacer, and an etch stop layer. The epitaxial region is in a substrate. A top surface of the epitaxial region is elevated from a top surface of the substrate, and the epitaxial region has a facet between the top surface of the substrate and the top surface of the epitaxial region. The gate structure is on the substrate. The contact spacer is laterally between the facet of the epitaxial region and the gate structure. The etch stop layer is over and adjoins each of the contact spacer and the top surface of the epitaxial region. A ratio of an etch selectivity of the contact spacer to an etch selectivity of the etch stop layer is equal to or less than 3:1.