Hemei, Taiwan

Chun-Hung Ko


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 6(Granted Patents)


Location History:

  • Hemei Township, TW (2014)
  • Hemei Township, Changhua County, TW (2014)

Company Filing History:


Years Active: 2014

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4 patents (USPTO):Explore Patents

Title: Innovations of Chun-Hung Ko

Introduction

Chun-Hung Ko is a notable inventor based in Hemei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing semiconductor structures, which are crucial for modern electronic devices.

Latest Patents

One of his latest patents is titled "Spacer for semiconductor structure contact." This invention involves a semiconductor structure that includes an epitaxial region, a gate structure, a contact spacer, and an etch stop layer. The design ensures that the epitaxial region is elevated from the substrate, with a specific ratio of etch selectivity between the contact spacer and the etch stop layer. Another significant patent is "Semiconductor structure and method," which describes a semiconductor structure featuring at least two gate structures on a substrate. This invention defines a recess between the gate structures, incorporating a filler material and an inter-layer dielectric layer, optimizing the structure for better performance.

Career Highlights

Chun-Hung Ko is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His expertise and innovative designs have contributed to the advancement of semiconductor technologies, making him a valuable asset to his company.

Collaborations

He has collaborated with notable coworkers such as Jyh-Huei Chen and Ming-Jie Huang, further enhancing the innovative capabilities within his team.

Conclusion

Chun-Hung Ko's contributions to semiconductor technology through his patents and collaborations highlight his role as a key inventor in the field. His work continues to influence advancements in electronic devices and semiconductor structures.

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