The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

Jan. 05, 2012
Applicants:

Chun-hung Ko, Hemei Township, Changhua County, TW;

Jyh-huei Chen, Hsinchu, TW;

Shyh-wei Wang, Hsinchu, TW;

Inventors:

Chun-Hung Ko, Hemei Township, Changhua County, TW;

Jyh-Huei Chen, Hsinchu, TW;

Shyh-Wei Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02 (2013.01); H01L 21/20 (2013.01);
Abstract

Methods of fabricating a semiconductor device including a metal gate transistor and a resistor are provided. A method includes providing a substrate including a transistor device region and an isolation region, forming a dummy gate over the transistor device region and a resistor over the isolation region, and implanting the resistor with a dopant. The method further includes wet etching the dummy gate to remove the dummy gate, and then forming a metal gate over the transistor device region to replace the dummy gate.


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