The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Aug. 04, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yen Chuang, Hsinchu, TW;
Ji-Yin Tsai, Zhudong Township, TW;
Jet-Rung Chang, Hsinchu, TW;
Zheng Hui Lim, Hsinchu, TW;
Ta-Chun MA, New Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10D 30/014 (2025.01); H10D 64/017 (2025.01); H10D 84/0188 (2025.01);
Abstract
Embodiments utilize a silicon germanium layer deposited to a low germanium percentage under a substrate. The substrate is used to form a field effect transistor FET structure. After formation of the FET, the silicon germanium layer is oxidized to drive germanium to a concentrated sublayer of the silicon germanium layer. The sublayer is used as a stop layer to remove the oxidized portion of the silicon germanium layer.