Hsinchu, Taiwan

Zheng Hui Lim

This inventor holds 3 USPTO granted patents and 7 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.

USPTO Granted Patents = 3 

% Patents Active = 66.7

Average Co-Inventor Count = 5.5

ph-index = 1


Company Filing History:


Years Active: 2026

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3 patents (USPTO):Explore Patents

Title: Zheng Hui Lim - Innovator in Semiconductor Technology

Introduction

Zheng Hui Lim is an inventor based in Hsinchu, Taiwan. He is known for his work in semiconductor technology, particularly in the development of nanosheet transistors. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

Zheng Hui Lim's latest patent applications include a method for forming a semiconductor device structure that features a nanosheet transistor. This method involves several steps, including the formation of a sacrificial layer between two stacks of semiconductor layers. The first stack consists of first and second semiconductor layers that are alternately stacked, while the second stack comprises third and fourth semiconductor layers. The sacrificial layer is made of a semiconductor metal oxide. The process continues with the formation of a sacrificial gate structure over a portion of the second stack, followed by the removal of unprotected layers. After creating a cavity by removing the sacrificial layer, the cavity is filled with a dielectric to form an isolation layer. Finally, first and second source/drain features are formed on opposing sides of the sacrificial gate structure, with specific arrangements to ensure contact with the isolation layer and semiconductor layers.

Conclusion

Zheng Hui Lim is an emerging inventor in the field of semiconductor technology, with promising applications that could shape the future of electronic devices. His innovative approaches demonstrate a commitment to advancing semiconductor fabrication methods.

Profile summary based on public USPTO records.
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