The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Dec. 05, 2012
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chao-Ching Cheng, Hsin-Chu, TW;
Ji-Yin Tsai, Zhudong Township, TW;
Cheng-Hsien Wu, Hsin-Chu, TW;
Chih-Hsin Ko, Fongshan, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The invention relates to integrated circuit fabrication, and more particularly to a semiconductor device with an interfacial layer. An exemplary structure for a semiconductor device comprises a SiGesubstrate, wherein the x is greater than 0.4; a Si layer over the SiGesubstrate; and a gate structure disposed over the Si layer, wherein the gate structure comprises a dielectric portion and an electrode portion that is disposed over the dielectric portion; wherein the dielectric portion comprises a layer of III-V material on the Si layer and a high-k dielectric layer adjacent to the electrode portion.