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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9887290 B1

PDFFull Text
Date of Patent:
Feb. 06, 2018

Filed:

Jan. 29, 2015

Silicon germanium source/drain regions

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ji-Yin Tsai, Zhudong Township, TW;

Yao-Tsung Huang, Kaohsiung, TW;

Chih-Hsin Ko, Fongshan, TW;

Clement Hsingjen Wann, Carmel, NY (US);

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Joshua King

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01); H01L 29/167 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/1054 (2013.01); H01L 29/161 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/66636 (2013.01); H01L 29/66651 (2013.01); H01L 29/66795 (2013.01); H01L 29/665 (2013.01); H01L 29/66628 (2013.01); Y10S 438/933 (2013.01);
Abstract

A method includes forming a gate stack over a semiconductor region, and recessing the semiconductor region to form a recess adjacent the gate stack. A silicon-containing semiconductor region is epitaxially grown in the recess to form a source/drain stressor. Arsenic is in-situ doped during the step of epitaxially growing the silicon-containing semiconductor region.

Find Patent Forward Citations

Tsai, Ji-Yin. (2018). Silicon germanium source/drain regions (U.S. Patent No. 9887290). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9887290

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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