The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Jan. 17, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
De-Wei Yu, Ping-Tung, TW;
Ming-Feng Hsieh, New Taipei, TW;
Hsueh-Chang Sung, Zhubei, TW;
Pei-Ren Jeng, Chu-Bei, TW;
Yee-Chia Yeo, Hsinchu, TW;
Chien-Chia Cheng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes etching a semiconductor substrate to form a trench between a first semiconductor strip and a second semiconductor strip. The first semiconductor strip has a first width at about 5 nm below a top of the first semiconductor strip and a second width at about 60 nm below the top of the first semiconductor strip. The first width is smaller than about 5 nm, and the second width is smaller than about 14.5 nm. The trench is filled with dielectric materials to form an isolation region, which is recessed to have a depth. A top portion of the first semiconductor strip protrudes higher than the isolation region to form a protruding fin. The protruding fin has a height smaller than the depth. A gate stack is formed to extend on a sidewall and a top surface of the protruding fin.