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For the Inventor, By the Inventor

Zhubei, Taiwan

Hsueh-Chang Sung

This inventor holds 100 USPTO granted patents and 15 published patent applications, primarily in FinFET Technology (CPC class H01L29-7848). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsueh-Chang Sung. Retrieved from https://idiyas.com/inventor/hsueh-chang-sung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 100 

% Patents Active = 91.0

Average Co-Inventor Count = 4.2

ph-index = 9

Forward Citations = 525(Granted Patents)

Forward Citations (Not Self Cited) = 470(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Jhubei, TW (2013)
  • Khubei, TW (2014 - 2017)
  • Hsinchu County, TW (2016 - 2018)
  • Zhubei, TW (2012 - 2024)

Company Filing History:

goldMedal99 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2012-2026

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Areas of Expertise:
FinFET
Epitaxial Structures
Source/Drain Regions
Transistors
Doping Profile
Protective Layer
Silicon Germanium
Strained Structures
Device Manufacturing
Interfacial Layer
Stressor Structure
Field Effect Transistor
100 patents (USPTO):Explore Patents
1. 12701751 - Doping profile for strained source/drain region (2026-08-04),
2. 12538529 - Epitaxial fin structures of FINFET having an epitaxial buffer region and an epitaxial capping region (2026-01-27),
3. 12419076 - Semiconductor device and method (2025-09-16),
4. 12310091 - Semiconductor device and method (2025-05-20),
5. 12288721 - Fin bending reduction through structure design (2025-04-29),
6. 12266655 - Transistors with recessed silicon cap and method forming same (2025-04-01),
7. 12218240 - Source/drain regions of FinFET devices and methods of forming same (2025-02-04),
8. 12218222 - FinFET device and method of forming same (2025-02-04),
9. 12170228 - Semiconductor device and methods of manufacturing (2024-12-17),
10. 12112986 - FinFET device and method (2024-10-08),
11. 12074071 - Source/drain structures and method of forming (2024-08-27),
12. 12062720 - Epitaxial source/drain structure and method of forming same (2024-08-13),
13. 12034061 - Method for forming semiconductor structure (2024-07-09),
14. 12002854 - Semiconductor device and method of manufacture (2024-06-04),
15. 11948840 - Protective layer over FinFET and method of forming same (2024-04-02),

Title: The Innovative Journey of Inventor Hsueh-Chang Sung

Introduction: Hsueh-Chang Sung, a talented inventor hailing from Zhubei, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Hsueh-Chang Sung holds several patents in the areas of electronics and semiconductor technology, showcasing his continuous dedication to pushing the boundaries of innovation.

Career Highlights: With a career spanning over two decades, Sung has worked with leading tech companies, research institutions, and universities, honing his skills and expertise in developing cutting-edge solutions.

Collaborations: Sung has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange to drive progress in the tech industry.

Conclusion: Hsueh-Chang Sung's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his position as a respected inventor in the world of electronics and semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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