The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Jul. 26, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hsueh-Chang Sung, Zhubei City, TW;

Tsz-Mei Kwok, Hsinchu, TW;

Kun-Mu Li, Zhudong Township, TW;

Tze-Liang Lee, Hsinchu, TW;

Chii-Horng Li, Zhubei City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 25/14 (2006.01); H01L 29/36 (2006.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/13 (2025.01); H10D 62/40 (2025.01); H10D 62/822 (2025.01); H10D 64/01 (2025.01); H10P 14/20 (2026.01); H10P 70/00 (2026.01); H10P 95/90 (2026.01);
U.S. Cl.
CPC ...
H10D 30/797 (2025.01); H10D 30/0223 (2025.01); H10D 30/601 (2025.01); H10D 62/021 (2025.01); H10D 62/151 (2025.01); H10D 62/405 (2025.01); H10D 62/822 (2025.01); H10D 64/021 (2025.01); H10P 14/3411 (2026.01); H10P 70/20 (2026.01); H10P 95/90 (2026.01); H10D 30/0275 (2025.01);
Abstract

The present disclosure relates to an integrated chip. The integrated chip includes a gate structure arranged over a substrate and a source/drain region arranged within the substrate along a side of the gate structure. The source/drain region includes a first layer lining interior sidewalls and a horizontally extending surface of the substrate, and a second layer lining interior sidewalls and a horizontally extending surface of the first layer. The first layer has a strain inducing component with a first strain inducing component concentration that continually decreases from an outermost sidewall of the first layer facing the substrate to one of the interior sidewalls of the first layer.


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