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Hsinchu, Taiwan

Tsz-Mei Kwok

This inventor holds 94 USPTO granted patents and 16 published patent applications, primarily in Semiconductor Devices (CPC class H01L29-7848). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Aiwan Semiconductor Manufacturing Company, Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsz-Mei Kwok. Retrieved from https://idiyas.com/inventor/tsz-mei-kwok

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 94 

% Patents Active = 87.2

Average Co-Inventor Count = 4.2

ph-index = 11

Forward Citations = 1,071(Granted Patents)

Forward Citations (Not Self Cited) = 978(Dec 10, 2025)


Inventors with similar research interests:

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Company Filing History:

goldMedal92 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 6 
 
Aiwan Semiconductor Manufacturing Company, Ltd.
 patents
bronzeMedal1 out of 503 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2012-2026

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Areas of Expertise:
Epitaxy
Source/Drain Regions
Integrated Circuit
Strained Structures
Doping Profile
MOS Devices
Contact Plugs
Recessed Top Surfaces
Stressors
Static RAM
Manufacturing Method
94 patents (USPTO):Explore Patents
1. 12720827 - Epitaxial structures grown on material with a crystallographic orientation of {110} (2026-08-25),
2. 12701751 - Doping profile for strained source/drain region (2026-08-04),
3. 12532518 - Transistor source/drain regions and methods of forming the same (2026-01-20),
4. 12439657 - Confined source/drain epitaxy regions and method forming same (2025-10-07),
5. 12426358 - Semiconductor device having epitaxy source/drain regions (2025-09-23),
6. 12408362 - Method of forming devices with strained source/drain structures (2025-09-02),
7. 12363993 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2025-07-15),
8. 12363945 - Method of forming source/drain regions with quadrilateral layers (2025-07-15),
9. 12075607 - Semiconductor device (2024-08-27),
10. 12057450 - Epitaxy regions with large landing areas for contact plugs (2024-08-06),
11. 12009427 - Semiconductor device and manufacturing method thereof (2024-06-11),
12. 11948971 - Confined source/drain epitaxy regions and method forming same (2024-04-02),
13. 11916071 - Semiconductor device having epitaxy source/drain regions (2024-02-27),
14. 11908742 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2024-02-20),
15. 11749752 - Doping profile for strained source/drain region (2023-09-05),

Title: The Innovative Journey of Tsz-Mei Kwok

Introduction: Tsz-Mei Kwok is a pioneering inventor based in Hsinchu, Taiwan, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tsz-Mei Kwok holds several patents in the areas of semiconductor technology and renewable energy solutions, showcasing her commitment to driving progress through innovation.

Career Highlights: With a career spanning over two decades, Tsz-Mei Kwok has worked with leading research institutions and technology companies, playing a key role in developing cutting-edge technologies that have shaped the industry.

Collaborations: Throughout her career, Tsz-Mei Kwok has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge sharing that has led to significant advancements in the field.

Conclusion: Tsz-Mei Kwok's passion for innovation, coupled with her technical expertise and collaborative spirit, continues to inspire the next generation of inventors and pave the way for a more sustainable and technologically advanced future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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