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For the Inventor, By the Inventor

Hsinchu, Taiwan

Tsz-Mei Kwok

USPTO Granted Patents = 91 

Average Co-Inventor Count = 4.2

ph-index = 10

Forward Citations = 1,046(Granted Patents)

Forward Citations (Not Self Cited) = 978(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal90 out of 40,850 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 4 
 
Aiwan Semiconductor Manufacturing Company, Ltd.
 patents

Years Active: 2012-2025

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Areas of Expertise:
Epitaxy Regions
Strained Source/Drain Structures
Semiconductor Devices
Integrated Circuits
MOS Devices
Doping Profiles
Contact Plugs
Transistor Strain-Inducing
Static Random Access Memory Cells
Recessed Top Surfaces
Field-Effect Transistors
91 patents (USPTO):Explore Patents
1. 12439657 - Confined source/drain epitaxy regions and method forming same (2025-10-07),
2. 12426358 - Semiconductor device having epitaxy source/drain regions (2025-09-23),
3. 12408362 - Method of forming devices with strained source/drain structures (2025-09-02),
4. 12363993 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2025-07-15),
5. 12363945 - Method of forming source/drain regions with quadrilateral layers (2025-07-15),
6. 12075607 - Semiconductor device (2024-08-27),
7. 12057450 - Epitaxy regions with large landing areas for contact plugs (2024-08-06),
8. 12009427 - Semiconductor device and manufacturing method thereof (2024-06-11),
9. 11948971 - Confined source/drain epitaxy regions and method forming same (2024-04-02),
10. 11916071 - Semiconductor device having epitaxy source/drain regions (2024-02-27),
11. 11908742 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2024-02-20),
12. 11749752 - Doping profile for strained source/drain region (2023-09-05),
13. 11652105 - Epitaxy regions with large landing areas for contact plugs (2023-05-16),
14. 11574916 - Semiconductor device and manufacturing method thereof (2023-02-07),
15. 11489074 - Semiconductor device and manufacturing method thereof (2022-11-01),

Title: The Innovative Journey of Tsz-Mei Kwok

Introduction: Tsz-Mei Kwok is a pioneering inventor based in Hsinchu, Taiwan, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tsz-Mei Kwok holds several patents in the areas of semiconductor technology and renewable energy solutions, showcasing her commitment to driving progress through innovation.

Career Highlights: With a career spanning over two decades, Tsz-Mei Kwok has worked with leading research institutions and technology companies, playing a key role in developing cutting-edge technologies that have shaped the industry.

Collaborations: Throughout her career, Tsz-Mei Kwok has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge sharing that has led to significant advancements in the field.

Conclusion: Tsz-Mei Kwok's passion for innovation, coupled with her technical expertise and collaborative spirit, continues to inspire the next generation of inventors and pave the way for a more sustainable and technologically advanced future.

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