The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Aug. 09, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jung-Chi Tai, Taipei, TW;
Yi-Fang Pai, Hsinchu, TW;
Tsz-Mei Kwok, Hsinchu, TW;
Tsung-Hsi Yang, Zhubei, TW;
Jeng-Wei Yu, New Taipei, TW;
Cheng-Hsiung Yen, Zhubei, TW;
Jui-Hsuan Chen, Hsinchu, TW;
Chii-Horng Li, Zhubei, TW;
Yee-Chia Yeo, Hsinchu, TW;
Heng-Wen Ting, Pingtung, TW;
Ming-Hua Yu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a gate stack on a first portion of a semiconductor fin, removing a second portion of the semiconductor fin to form a recess, and forming a source/drain region starting from the recess. The formation of the source/drain region includes performing a first epitaxy process to grow a first semiconductor layer, wherein the first semiconductor layer has straight-and-vertical edges, and performing a second epitaxy process to grow a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are of a same conductivity type.