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For the Inventor, By the Inventor

Zhubei, Taiwan

Tsung-Hsi Yang

This inventor holds 17 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Witty Mate Corporation, Other. Active years: 2006-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsung-Hsi Yang. Retrieved from https://idiyas.com/inventor/tsung-hsi-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 88.2

Average Co-Inventor Count = 4.2

ph-index = 3

Forward Citations = 25(Granted Patents)


Location History:

  • Yunlin, TW (2006)
  • Hsinchu County, TW (2018)
  • Hsinchu, TW (2011 - 2023)
  • Zhubei, TW (2019 - 2024)

Company Filing History:

goldMedal15 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 1 
 
Witty Mate Corporation
 patent
bronzeMedal1 out of 834,570 
Other
 patents

Years Active: 2006-2025

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Areas of Expertise:
Epitaxy Regions
Transistors
Semiconductor Structure
Source-Drain Regions
Contact Plugs
Nodule Defects
LED Manufacturing
ZnSe Layer Growth
17 patents (USPTO):Explore Patents
1. 12439657 - Confined source/drain epitaxy regions and method forming same (2025-10-07),
2. 12389649 - Transistors with stacked semiconductor layers as channels (2025-08-12),
3. 12057450 - Epitaxy regions with large landing areas for contact plugs (2024-08-06),
4. 11948971 - Confined source/drain epitaxy regions and method forming same (2024-04-02),
5. 11652105 - Epitaxy regions with large landing areas for contact plugs (2023-05-16),
6. 11581425 - Method for manufacturing semiconductor structure with enlarged volumes of source-drain regions (2023-02-14),
7. 11569084 - Method for manufacturing semiconductor structure with reduced nodule defects (2023-01-31),
8. 11315837 - Semiconductor device and method (2022-04-26),
9. 11257908 - Transistors with stacked semiconductor layers as channels (2022-02-22),
10. 11101347 - Confined source/drain epitaxy regions and method forming same (2021-08-24),
11. 10879128 - Semiconductor device and method of forming same (2020-12-29),
12. 10770359 - Semiconductor device and method (2020-09-08),
13. 10515858 - Semiconductor device and method (2019-12-24),
14. 10269655 - Semiconductor device and method (2019-04-23),
15. 10002780 - Method of manufacturing a semiconductor structure (2018-06-19),

Title: The Innovative Journey of Inventor Tsung-Hsi Yang

Introduction: Tsung-Hsi Yang, a talented inventor hailing from Zhubei, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Yang's latest patents showcase his prowess in developing cutting-edge solutions for various industries, ranging from electronics to healthcare. His commitment to pushing the boundaries of what is possible is evident in each of his patented inventions.

Career Highlights: Throughout his illustrious career, Tsung-Hsi Yang has consistently demonstrated a keen eye for identifying gaps in the market and creating inventive solutions to address them. His innovative spirit has led to the successful commercialization of several groundbreaking technologies.

Collaborations: Yang's collaborative efforts with leading research institutions, universities, and tech companies have been instrumental in bringing his inventions to life. By working closely with experts in diverse fields, he has been able to leverage their knowledge and expertise to enhance the impact of his innovations.

Conclusion: Tsung-Hsi Yang's remarkable journey as an inventor exemplifies the power of creativity, perseverance, and collaboration in driving technological advancements. His passion for innovation continues to inspire the next generation of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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