The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Aug. 02, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsz-Mei Kwok, Hsinchu, TW;
Tsung-Hsi Yang, Zhubei, TW;
Jeng-Wei Yu, New Taipei, TW;
Li-Wei Chou, Hsinchu, TW;
Ming-Hua Yu, Hsinchu, TW;
Chii-Horng Li, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first semiconductor fin extending from a substrate, a first dielectric fin extending from the substrate adjacent a first side of the first semiconductor fin and a second dielectric fin extending from the substrate adjacent a second side of the first semiconductor fin, a first gate stack over and along sidewalls of the first semiconductor fin, the first dielectric fin, and the second dielectric fin, a first epitaxial source/drain region in the first semiconductor fin and extending from the first dielectric fin to the second dielectric fin, and an air gap between the first epitaxial source/drain region and the substrate, the air gap extending between the first dielectric fin and the second dielectric fin.