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For the Inventor, By the Inventor

Hsinchu, Taiwan

Li-Wei Chou

This inventor holds 18 USPTO granted patents and 5 published patent applications. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., E Ink Holdings Inc., Corning Incorporated. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Li-Wei Chou. Retrieved from https://idiyas.com/inventor/li-wei-chou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 94.4

Average Co-Inventor Count = 4.6

ph-index = 3

Forward Citations = 44(Granted Patents)


Location History:

  • Taoyuan, TW (2018 - 2021)
  • Pingtung County, TW (2019 - 2023)
  • Hsinchu, TW (2018 - 2024)

Company Filing History:

goldMedal14 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 594 
 
E Ink Holdings Inc.
 patents
bronzeMedal1 out of 7,479 
 
Corning Incorporated
 patents
4. 1 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2018-2026

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18 patents (USPTO):Explore Patents
1. 12707714 - FinFET device having flat-top epitaxial features and method of making the same (2026-08-11),
2. 12439657 - Confined source/drain epitaxy regions and method forming same (2025-10-07),
3. 12363993 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2025-07-15),
4. 12291479 - Textured glass articles and methods of making the same (2025-05-06),
5. 12142560 - Semiconductor packages and methods of forming same (2024-11-12),
6. 11948971 - Confined source/drain epitaxy regions and method forming same (2024-04-02),
7. 11908742 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2024-02-20),
8. 11769771 - FinFET device having flat-top epitaxial features and method of making the same (2023-09-26),
9. 11276693 - FinFET device having flat-top epitaxial features and method of making the same (2022-03-15),
10. 11101347 - Confined source/drain epitaxy regions and method forming same (2021-08-24),
11. 11101209 - Redistribution structures in semiconductor packages and methods of forming same (2021-08-24),
12. 11037826 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2021-06-15),
13. 10879128 - Semiconductor device and method of forming same (2020-12-29),
14. 10546784 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2020-01-28),
15. 10490552 - FinFET device having flat-top epitaxial features and method of making the same (2019-11-26),

Title: The Innovative Journey of Inventor Li-Wei Chou

Introduction: Li-Wei Chou is a pioneering inventor hailing from Hsinchu, Taiwan. Her groundbreaking work in the field of technology has revolutionized various industries and earned her recognition worldwide.

Latest Patents: Li-Wei Chou holds several patents in the areas of nanotechnology, renewable energy, and biomedicine. Her most recent patent involves a novel method for enhancing solar cell efficiency using nanomaterials, showcasing her commitment to sustainable energy solutions.

Career Highlights: With a background in materials science and engineering, Li-Wei Chou has had a distinguished career marked by numerous achievements. She has served as a research scientist at leading research institutions and has published extensively in prestigious scientific journals.

Collaborations: Throughout her career, Li-Wei Chou has collaborated with top researchers, engineers, and industry experts to bring her innovative ideas to life. Her collaborative spirit and interdisciplinary approach have led to the development of cutting-edge technologies with real-world applications.

Conclusion: Li-Wei Chou's passion for innovation and her relentless pursuit of excellence have cemented her reputation as a trailblazer in the world of technology. Her work continues to inspire future generations of inventors and researchers to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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