Taiwan Semiconductor Manufacturing Comp. Ltd.

E Ink Holdings Inc.

Corning Incorporated

Li-Wei Chou

Ming-Hua Yu

Tsz-Mei Kwok

Jeng-Wei Yu

Yi-Jing Lee

Tsung-Hsi Yang

Chung-Shi Liu

Jiun Yi Wu

Chien-Hsun Lee

Tsung-Ding Wang

Chi-Mao Hung

Jung Wei Cheng

Yu-min Liang

Hao-Cheng Hou

Hung-Jen Lin

Chuen-Jen Liu

Yu-Ming Lee

Jia-Hong Xu

Chii-Horng Li

Jiangwei Feng

Jhih-Wei Liang

Chih-Jen Wu

A method includes forming isolations extending into a semiconductor substrate, recessing the isolation regions, wherein a semiconductor region between the isolation regions forms a semiconductor fin, forming a first dielectric layer on the isolation regions and the semiconductor fin, forming a second dielectric layer over the first dielectric layer, planarizing the second dielectric layer and the first dielectric layer, and recessing the first dielectric layer. A portion of the second dielectric layer protrudes higher than remaining portions of the first dielectric layer to form a protruding dielectric fin. A portion of the semiconductor fin protrudes higher than the remaining portions of the first dielectric layer to form a protruding semiconductor fin. A portion of the protruding semiconductor fin is recessed to form a recess, from which an epitaxy semiconductor region is grown. The epitaxy semiconductor region expands laterally to contact a sidewall of the protruding dielectric fin.

Confined source/drain epitaxy regions and method forming same

A semiconductor device includes a substrate, first and second fins over the substrate and extending upwardly in a first direction, an epitaxial material comprising a first portion, a second portion, and a third portion, and a conductive feature in contact with the epitaxial material. The first portion is located on the first fin, the second portion is located on the second fin, and the third portion is connected to the first and second portions. The third portion has a bottom surface bended upwardly with an apex located between the first and second fins. In a cross-sectional plane perpendicular to a lengthwise direction of the first and second fins, the bottom surface has a first straight line and a second straight line intersecting at the apex.

Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same

A method is described herein of making a textured glass article, the method includes: etching an initial primary surface of a glass substrate having a thickness with a hydrofluoric acid-free etchant having a pH of about 3 or less; and removing the etchant from the glass substrate, such that the etching is conducted from above ambient temperature to about 100° C. to form a textured region that is defined by a primary surface of the substrate and comprises a sparkle of 2% or less, and the etching comprises a plurality of batch cycles.

Textured glass articles and methods of making the same

An embodiment semiconductor package includes a bare semiconductor chip, a packaged semiconductor chip adjacent the bare semiconductor chip, and a redistribution structure bonded to the bare semiconductor chip and the packaged semiconductor chip. The redistribution structure includes a first redistribution layer having a first thickness; a second redistribution layer having a second thickness; and a third redistribution layer between the first redistribution layer and the second redistribution layer. The third redistribution layer has a third thickness greater than the first thickness and the second thickness. The package further includes an underfill disposed between the bare semiconductor chip and the redistribution structure and a molding compound encapsulating the bare semiconductor chip, the packaged semiconductor chip, and the underfill.

Semiconductor packages and methods of forming same

A semiconductor device and method of forming the same is disclosed. The semiconductor device includes a semiconductor substrate, a first fin and a second fin extending from the semiconductor substrate, a first lower semiconductor feature over the first fin, a second lower semiconductor feature over the second fin. Each of the first and second lower semiconductor features includes a top surface bending downward towards the semiconductor substrate in a cross-sectional plane perpendicular to a lengthwise direction of the first and second fins. The semiconductor device also includes an upper semiconductor feature over and in physical contact with the first and second lower semiconductor features, and a dielectric layer on sidewalls of the first and second lower semiconductor features.

A semiconductor device and method of forming the same are disclosed. The semiconductor device includes a substrate, an isolation structure over the substrate, a fin extending from the substrate, and an epitaxial feature over the fin. The epitaxial feature comprises a lower portion and an upper portion. The lower portion extends from the fin and extends above the isolation structure. The upper portion is over the lower portion. The upper portion extends partially through the lower portion in a cross section perpendicular to a lengthwise direction of the fin.

FinFET device having flat-top epitaxial features and method of making the same

A semiconductor device and method of forming the same are disclosed. The method of forming a semiconductor device includes providing a substrate, an isolation structure over the substrate, and at least two fins extending from the substrate and through the isolation structure; etching the at least two fins, thereby forming at least two trenches; growing first epitaxial features in the at least two trenches; growing second epitaxial features over the first epitaxial features in a first growth condition; and after the second epitaxial features reach a target critical dimension, growing the second epitaxial features in a second growth condition different from the first growth condition.

Redistribution structures in semiconductor packages and methods of forming same

A semiconductor device and method of forming the same is disclosed. The semiconductor device includes a semiconductor substrate, a first fin and a second fin extending from the semiconductor substrate, a first lower semiconductor feature directly over the first fin, and a second lower semiconductor feature directly over the second fin. Each of the first and second lower semiconductor features includes a top surface bending downward towards the semiconductor substrate. The semiconductor also further includes an upper semiconductor feature directly over and in physical contact with the first and second lower semiconductor features. The semiconductor device further includes a dielectric layer on sidewalls of the first and second lower semiconductor features.

A semiconductor device includes a first semiconductor fin extending from a substrate, a first dielectric fin extending from the substrate adjacent a first side of the first semiconductor fin and a second dielectric fin extending from the substrate adjacent a second side of the first semiconductor fin, a first gate stack over and along sidewalls of the first semiconductor fin, the first dielectric fin, and the second dielectric fin, a first epitaxial source/drain region in the first semiconductor fin and extending from the first dielectric fin to the second dielectric fin, and an air gap between the first epitaxial source/drain region and the substrate, the air gap extending between the first dielectric fin and the second dielectric fin.

Semiconductor device and method of forming same

A semiconductor device and method of forming the same is disclosed. The semiconductor device includes a substrate, two semiconductor fins over the substrate, and a semiconductor feature over the two semiconductor fins. The semiconductor feature comprises two lower portions and one upper portion. The two lower portions are directly over the two semiconductor fins respectively. The upper portion is over the two lower portions. A bottom surface of the upper portion has an arc-like cross-sectional shape.

A semiconductor device includes a substrate, an isolation structure over the substrate, two fins over the substrate and protruding out of the isolation structure, and an epitaxial feature over the two fins. The epitaxial feature includes two lower portions and one upper portion. The two lower portions are over the two fins respectively. The upper portion is over the two lower portions and connects the two lower portions. The upper portion has a different dopant concentration than the two lower portions. A top surface of the upper portion is substantially flat.

An electronic paper display apparatus, a signal transmission system and a method thereof are provided. The electronic paper display apparatus is configured to transmit an encrypted signal. The electronic paper display apparatus includes an electronic paper display panel and a display driver. The electronic paper display panel is configured to display a first image or a second image. The display driver is electrically coupled to the electronic paper display panel and configured to output a driving signal to the electronic paper display panel. The display driver drives the electronic paper display panel to alternately display the first image and the second image for transmitting the encrypted signal by using the driving signal during a signal transmission period.

Growing community of inventors

Hsinchu, Taiwan

Li-Wei Chou