The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Jul. 29, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Yi-Jing Lee, Hsinchu City, TW;

Li-Wei Chou, Hsinchu, TW;

Ming-Hua Yu, Hsinchu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/60 (2025.01); H10D 62/832 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01); H10P 52/40 (2026.01);
U.S. Cl.
CPC ...
H10D 84/853 (2025.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 30/6219 (2025.01); H10D 62/115 (2025.01); H10D 62/151 (2025.01); H10D 62/60 (2025.01); H10D 62/832 (2025.01); H10D 64/259 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10P 52/402 (2026.01); H10P 14/24 (2026.01); H10P 14/27 (2026.01); H10P 14/3411 (2026.01);
Abstract

A semiconductor device includes a substrate, a semiconductor feature protruding from the substrate and extending lengthwise in a first direction, an epitaxial feature directly above the semiconductor feature, and a gate stack adjacent the epitaxial feature. The epitaxial feature comprises a lower portion and an upper portion over the lower portion. The upper portion extends partially through the lower portion in a cross section perpendicular to the first direction. A topmost surface of the upper portion is substantially flat.


Find Patent Forward Citations

Quick Actions:

Lee, Yi-Jing. (2026). Finfet device having flat-top epitaxial features and method of making the same (U.S. Patent No. 12707714). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12707714

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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