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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yi-Jing Lee

USPTO Granted Patents = 84 

Average Co-Inventor Count = 3.4

ph-index = 10

Forward Citations = 2,487(Granted Patents)

Forward Citations (Not Self Cited) = 2,450(Oct 12, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal84 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2025

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84 patents (USPTO):
1. 12426358 - Semiconductor device having epitaxy source/drain regions (2025-09-23),
2. 12369342 - Increasing source/drain dopant concentration to reduced resistance (2025-07-22),
3. 12363993 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2025-07-15),
4. 12363958 - Ultra-thin fin structure and method of fabricating the same (2025-07-15),
5. 12075607 - Semiconductor device (2024-08-27),
6. 12062710 - Increasing source/drain dopant concentration to reduced resistance (2024-08-13),
7. 12057449 - Isolation structures for semiconductor devices (2024-08-06),
8. 11916071 - Semiconductor device having epitaxy source/drain regions (2024-02-27),
9. 11908749 - Method of metal gate formation and structures formed by the same (2024-02-20),
10. 11908742 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2024-02-20),
11. 11862683 - Ultra-thin fin structure and method of fabricating the same (2024-01-02),
12. 11830934 - Increasing source/drain dopant concentration to reduced resistance (2023-11-28),
13. 11769771 - FinFET device having flat-top epitaxial features and method of making the same (2023-09-26),
14. 11695063 - Method of forming shaped source/drain epitaxial layers of a semiconductor device (2023-07-04),
15. 11664423 - Method for forming a source/drain of a semiconductor device having an insulating stack in a recess structure (2023-05-30),

Title: Yi-Jing Lee: A Pioneer in Semiconductor Innovations

Introduction

Yi-Jing Lee is a prominent inventor based in Hsinchu, Taiwan, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 80 patents, his work has made substantial impacts on the development of advanced semiconductor devices.

Latest Patents

Among his latest innovations, Yi-Jing Lee has developed a groundbreaking semiconductor device that incorporates a semiconductor substrate, semiconductor fin, gate structure, and epitaxy structures for both source and drain. This device features a semiconductor fin positioned over the substrate, designed with a channel portion and recessed portions on either side. The gate structure is situated above the channel, while the source/drain epitaxy structures rest over the recessed areas, boasting a unique round surface characteristic. Additionally, Yi-Jing has introduced a method for increasing source/drain dopant concentration to reduce resistance, which involves creating a recess in the semiconductor fin and conducting epitaxy using specialized gases to optimize dopant levels.

Career Highlights

Yi-Jing Lee is currently associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His expertise and innovative spirit have earned him recognition among peers and industry stakeholders.

Collaborations

Collaboration has been a key aspect of Yi-Jing Lee's career. He has worked alongside accomplished colleagues, including Chih-Hsin Ko and Ming-Hua Yu, who share a similar passion for semiconductor research and innovation. Their combined efforts have contributed to the advancement of technologies that shape the future of the industry.

Conclusion

Through his brilliant inventions and dedicated research, Yi-Jing Lee exemplifies the spirit of innovation in the semiconductor sector. With numerous patents to his name and ongoing collaborations with industry experts, he continues to push the boundaries of technology, paving the way for future advancements.

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