Ming-Hua Yu

This inventor holds 118 USPTO granted patents and 44 published patent applications, primarily in Semiconductor Devices (CPC class H01L29-66795). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2003-2025.

USPTO Granted Patents = 118 (Patent Applications = 44)

% Patents Active = 94.9

Average Co-Inventor Count = 3.5

ph-index = 9

Forward Citations = 672(Granted Patents)

Forward Citations (Not Self Cited) = 627(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

I-Lan, TW (2003)
Jhubei, TW (2009 - 2013)
Hsinchu County, TW (2015)
Hsinchu, TW (2009 - 2024)

Company Filing History:

118 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2003-2025

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Areas of Expertise:

Epitaxy

Source/Drain Formation

Semiconductor Device

Transistors

Dopant Concentration

Dynamic Laser-Assisted Etching

FinFET Device

Integrated Circuit

Manufacturing Method

Epitaxial Growth

Selective Loss Defects

Multi-Layer Structures

118 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12486597 - Apparatus and method for use with a substrate chamber (2025-12-02),

2. 12480223 - Apparatus and method for use with a substrate chamber (2025-11-25),

3. 12464752 - Method of forming shaped source/drain epitaxial layers of a semiconductor device (2025-11-04),

4. 12439657 - Confined source/drain epitaxy regions and method forming same (2025-10-07),

5. 12426358 - Semiconductor device having epitaxy source/drain regions (2025-09-23),

6. 12408367 - Semiconductor device (2025-09-02),

7. 12389649 - Transistors with stacked semiconductor layers as channels (2025-08-12),

8. 12369374 - Epitaxial growth methods and structures thereof (2025-07-22),

9. 12369342 - Increasing source/drain dopant concentration to reduced resistance (2025-07-22),

10. 12363993 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2025-07-15),

11. 12266687 - Semiconductor device and method (2025-04-01),

12. 12243745 - Dynamic laser-assisted etching (2025-03-04),

13. 12154974 - Source/drain formation with reduced selective loss defects (2024-11-26),

14. 12119401 - Semiconductor device and methods of forming (2024-10-15),

15. 12075607 - Semiconductor device (2024-08-27),

Title: The Remarkable Innovations of Ming-Hua Yu

Introduction: Ming-Hua Yu is a renowned inventor based in Hsinchu, Taiwan, notable for his contributions to semiconductor technology. With an impressive portfolio of 106 patents, Yu's work significantly impacts the field of Fin Field-Effect Transistors (FinFETs) and semiconductor devices.

Latest Patents: Among his latest innovations, Yu has developed a method for source/drain formation with reduced selective loss defects. This method involves the formation of semiconductor fins in both n-type and p-type FinFET regions, utilizing dielectric fins, and a series of epitaxy processes aimed at optimizing device performance. Additionally, Yu has patented a semiconductor device that incorporates a first fin and gate stack, complemented by strategically placed epitaxial layers with varying dopant concentrations, further enhancing the functionality and efficiency of semiconductor components.

Career Highlights: Yu has made substantial strides in the semiconductor industry, currently working at Taiwan Semiconductor Manufacturing Company Limited (TSMC). His innovative approaches and contributions to the development of advanced semiconductor technologies emphasize his status as a leading figure in the industry.

Collaborations: Throughout his career, Ming-Hua Yu has collaborated with notable colleagues such as Tze-Liang Lee and Yi-Jing Lee, fostering innovation through collective expertise and diverse perspectives.

Conclusion: Ming-Hua Yu's significant contributions to the field of semiconductor technology through his numerous patents illustrate the profound impact of his work. His innovative methods and collaboration with esteemed colleagues continue to shape the future of the industry, establishing him as a pivotal inventor in his field.