IDiyas

For the Inventor, By the Inventor

Hsinchu, Taiwan

Jeng-Wei Yu

USPTO Granted Patents = 21 

 

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 15(Granted Patents)


Location History:

  • New Taipei, TW (2013 - 2024)
  • Hsinchu, TW (2013 - 2024)

Company Filing History:

goldMedal15 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal6 out of 75 
 
Opto Tech Corporation
 patents

Years Active: 2013-2025

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21 patents (USPTO):
1. 12439657 - Confined source/drain epitaxy regions and method forming same (2025-10-07),
2. 12389649 - Transistors with stacked semiconductor layers as channels (2025-08-12),
3. 12363993 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2025-07-15),
4. 12094778 - Fin field-effect transistor device and method of forming (2024-09-17),
5. 12068395 - Method for forming an undoped region under a source/drain (2024-08-20),
6. 12057450 - Epitaxy regions with large landing areas for contact plugs (2024-08-06),
7. 11948971 - Confined source/drain epitaxy regions and method forming same (2024-04-02),
8. 11908742 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2024-02-20),
9. 11652105 - Epitaxy regions with large landing areas for contact plugs (2023-05-16),
10. 11257908 - Transistors with stacked semiconductor layers as channels (2022-02-22),
11. 11101347 - Confined source/drain epitaxy regions and method forming same (2021-08-24),
12. 11037826 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2021-06-15),
13. 10879128 - Semiconductor device and method of forming same (2020-12-29),
14. 10546784 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2020-01-28),
15. 10049936 - Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the same (2018-08-14),

Title: The Innovative Journey of Jeng-Wei Yu

Introduction:

Jeng-Wei Yu, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Jeng-Wei Yu's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips for various electronic devices.

Career Highlights:

With a career spanning over two decades, Jeng-Wei Yu has held key roles in leading tech companies, where he spearheaded research and development projects that have led to numerous patented inventions.

Collaborations:

Throughout his career, Jeng-Wei Yu has collaborated with top researchers, engineers, and scientists in the industry, fostering a culture of innovation and excellence in all his projects.

Conclusion:

In conclusion, Jeng-Wei Yu's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor in the tech world.

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