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For the Inventor, By the Inventor

Hsinchu, Taiwan

Jeng-Wei Yu

This inventor holds 21 USPTO granted patents and 8 published patent applications and 1 EPO patent, primarily in Semiconductor Manufacturing. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Opto Tech Corporation. Active years: 2013-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeng-Wei Yu. Retrieved from https://idiyas.com/inventor/jeng-wei-yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 18(Granted Patents)


Location History:

  • New Taipei, TW (2013 - 2024)
  • Hsinchu, TW (2013 - 2024)

Company Filing History:

goldMedal15 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal6 out of 75 
 
Opto Tech Corporation
 patents

Years Active: 2013-2025

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Areas of Expertise:
Epitaxy Regions
Transistors
Semiconductor Device
Nitride Layer Regrowth
Source/Drain
Stacked Semiconductor Layers
Photo-Enhanced Wet Oxidation
Light Emitting Diode
Contact Plugs
Fin Field-Effect Transistor
21 patents (USPTO):Explore Patents
1. 12439657 - Confined source/drain epitaxy regions and method forming same (2025-10-07),
2. 12389649 - Transistors with stacked semiconductor layers as channels (2025-08-12),
3. 12363993 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2025-07-15),
4. 12094778 - Fin field-effect transistor device and method of forming (2024-09-17),
5. 12068395 - Method for forming an undoped region under a source/drain (2024-08-20),
6. 12057450 - Epitaxy regions with large landing areas for contact plugs (2024-08-06),
7. 11948971 - Confined source/drain epitaxy regions and method forming same (2024-04-02),
8. 11908742 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2024-02-20),
9. 11652105 - Epitaxy regions with large landing areas for contact plugs (2023-05-16),
10. 11257908 - Transistors with stacked semiconductor layers as channels (2022-02-22),
11. 11101347 - Confined source/drain epitaxy regions and method forming same (2021-08-24),
12. 11037826 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2021-06-15),
13. 10879128 - Semiconductor device and method of forming same (2020-12-29),
14. 10546784 - Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same (2020-01-28),
15. 10049936 - Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the same (2018-08-14),

Title: The Innovative Journey of Jeng-Wei Yu

Introduction:

Jeng-Wei Yu, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Jeng-Wei Yu's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips for various electronic devices.

Career Highlights:

With a career spanning over two decades, Jeng-Wei Yu has held key roles in leading tech companies, where he spearheaded research and development projects that have led to numerous patented inventions.

Collaborations:

Throughout his career, Jeng-Wei Yu has collaborated with top researchers, engineers, and scientists in the industry, fostering a culture of innovation and excellence in all his projects.

Conclusion:

In conclusion, Jeng-Wei Yu's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor in the tech world.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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