The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

May. 15, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yi-Jing Lee, Hsinchu, TW;

Jeng-Wei Yu, Hsinchu, TW;

Li-Wei Chou, Hsinchu, TW;

Tsz-Mei Kwok, Hsinchu, TW;

Ming-Hua Yu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8221 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/84 (2013.01); H01L 27/0688 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01);
Abstract

A semiconductor device and method of forming the same is disclosed. The semiconductor device includes a substrate, two semiconductor fins over the substrate, and a semiconductor feature over the two semiconductor fins. The semiconductor feature comprises two lower portions and one upper portion. The two lower portions are directly over the two semiconductor fins respectively. The upper portion is over the two lower portions. A bottom surface of the upper portion has an arc-like cross-sectional shape.


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