The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Mar. 11, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tsung-Hsi Yang, Hsinchu, TW;

Che-Yu Lin, Hsinchu, TW;

Yi-Fang Pai, Hsinchu, TW;

Pei-Ren Jeng, Hsinchu, TW;

Chii-Horng Li, Hsinchu, TW;

Yee-Chia Yeo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/3105 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/02337 (2013.01); H01L 21/02351 (2013.01); H01L 21/31055 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823814 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01);
Abstract

A method for smoothing a surface of a semiconductor portion is disclosed. In the method, an intentional oxide layer is formed on the surface of the semiconductor portion, a treated layer is formed in the semiconductor portion and inwardly of the intentional oxide layer, and then, the intentional oxide layer and the treated layer are removed to obtain a smoothed surface. The method may also be used for widening a recess in a manufacturing process for a semiconductor structure.


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