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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yi-Fang Pai

This inventor holds 33 USPTO granted patents and 12 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2012-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi-Fang Pai. Retrieved from https://idiyas.com/inventor/yi-fang-pai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33 

% Patents Active = 87.9

Average Co-Inventor Count = 4.6

ph-index = 5

Forward Citations = 165(Granted Patents)


Company Filing History:

goldMedal33 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2012-2025

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Areas of Expertise:
Source/Drain Regions
Semiconductor Structure
Integrated Circuits
Epitaxial Formation
FinFETs
Contact Resistance
Cyclic Deposition
Epitaxy Engineering
Strained Structures
Fabrication Methods
Arsenic-Containing Barrier
Undoped Regions
33 patents (USPTO):Explore Patents
1. 12389671 - Source/drain regions of semiconductor devices and methods of forming the same (2025-08-12),
2. 12205849 - Semiconductor device structure with source/drain structure and method for forming the same (2025-01-21),
3. 12094778 - Fin field-effect transistor device and method of forming (2024-09-17),
4. 12068395 - Method for forming an undoped region under a source/drain (2024-08-20),
5. 12057450 - Epitaxy regions with large landing areas for contact plugs (2024-08-06),
6. 11923200 - Integrated circuits having source/drain structure and method of making (2024-03-05),
7. 11804487 - Source/drain regions of semiconductor devices and methods of forming the same (2023-10-31),
8. 11652105 - Epitaxy regions with large landing areas for contact plugs (2023-05-16),
9. 11581425 - Method for manufacturing semiconductor structure with enlarged volumes of source-drain regions (2023-02-14),
10. 11373867 - Integrated circuits having source/drain structure and method of making (2022-06-28),
11. 11296080 - Source/drain regions of semiconductor devices and methods of forming the same (2022-04-05),
12. 10861935 - Semiconductor device source/drain region with arsenic-containing barrier region (2020-12-08),
13. 10734517 - Integrated circuits having source/drain structure (2020-08-04),
14. 10374038 - Semiconductor device source/drain region with arsenic-containing barrier region (2019-08-06),
15. 10340190 - Semiconductor device structure and method for forming the same (2019-07-02),

Title: Pushing the Boundaries of Innovation: The Visionary Inventor, Yi-Fang Pai

Introduction: Yi-Fang Pai, a visionary inventor based in Hsinchu, Taiwan, is a leading figure in the world of patents and inventions. With a remarkable portfolio of 28 patents and a relentless drive for excellence, Yi-Fang Pai has made significant contributions to the field of integrated circuits and semiconductor devices.

Latest Patents: Among Yi-Fang Pai's latest patents is the innovative design of integrated circuits featuring source/drain structure. This patent showcases his exceptional understanding of semiconductor technology, with a focus on optimizing the performance and efficiency of electronic devices through strategic material design and construction.

In another groundbreaking patent, Yi-Fang Pai introduces a novel approach to forming source/drain regions in semiconductor devices. By incorporating epitaxial growth techniques, he has revolutionized the production process, resulting in enhanced functionality and reliability in electronic components.

Career Highlights: Yi-Fang Pai is currently associated with Taiwan Semiconductor Manufacturing Company Limited (TSMC), one of the world's leading semiconductor companies. His expertise and innovative spirit have undoubtedly contributed to TSMC's reputation as a pioneer in semiconductor manufacturing.

Collaborations: Within TSMC, Yi-Fang Pai collaborates closely with esteemed colleagues such as Chien-Chang Su and Hsien-Hsin Lin. Together, they form a dynamic team dedicated to pushing the boundaries of technology and delivering cutting-edge solutions to the industry.

Conclusion: In conclusion, Yi-Fang Pai stands out as a visionary inventor who continues to push the boundaries of innovation. His passion for creating groundbreaking solutions and his commitment to excellence make him a true asset to the world of patents and inventions. Yi-Fang Pai's relentless pursuit of technological advancements sets him apart as a trailblazer in the field, shaping the future of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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