The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Aug. 05, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chien-I Kuo, Chiayi, TW;
Shao-Fu Fu, Kaohsiung, TW;
Chia-Ling Chan, New Taipei, TW;
Yi-Fang Pai, Hsinchu, TW;
Li-Li Su, ChuBei, TW;
Wei Hao Lu, Taoyuan, TW;
Wei Te Chiang, Chiayi, TW;
Chii-Horng Li, Zhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.