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For the Inventor, By the Inventor

Chubei, Taiwan

Li-Li Su

USPTO Granted Patents = 46 

Average Co-Inventor Count = 4.6

ph-index = 4

Forward Citations = 64(Granted Patents)


Location History:

  • Zhubei, TW (2019 - 2021)
  • Hsinchu County, TW (2020 - 2022)
  • ChuBei, TW (2017 - 2024)

Company Filing History:

goldMedal46 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2017-2025

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Areas of Expertise:
Semiconductor Devices
Transistor Source/Drain Regions
FinFET Technology
Epitaxial Layers
Nano-Structure Transistors
Source/Drain Formation
Merged Source/Drain Features
Leakage Current Suppression
Carbon Liner Layers
Air Inner Spacers
Multilayer Source/Drain Regions
Selective Loss Defects
46 patents (USPTO):Explore Patents
1. 12437990 - Semiconductor device and method of manufacture (2025-10-07),
2. 12419084 - Methods of forming transistor source/drain regions comprising carbon liner layers (2025-09-16),
3. 12402344 - FETS and methods of forming FETS (2025-08-26),
4. 12396242 - Nano-structure transistors with air inner spacers and methods forming same (2025-08-19),
5. 12396209 - Semiconductor device and method (2025-08-19),
6. 12389671 - Source/drain regions of semiconductor devices and methods of forming the same (2025-08-12),
7. 12363945 - Method of forming source/drain regions with quadrilateral layers (2025-07-15),
8. 12349426 - Source/drain device and method of forming thereof (2025-07-01),
9. 12336237 - Source/drain regions of semiconductor device and method of forming the same (2025-06-17),
10. 12255255 - Method of manufacturing a FinFET with merged epitaxial source/drain regions (2025-03-18),
11. 12243931 - Source/drain epitaxial layers for transistors (2025-03-04),
12. 12243783 - Epitaxial source/drain recess formation with metal-comprising masking layers and structures resulting therefrom (2025-03-04),
13. 12237230 - Semiconductor device with leakage current suppression and method for forming the same (2025-02-25),
14. 12154974 - Source/drain formation with reduced selective loss defects (2024-11-26),
15. 12132118 - Semiconductor device having a multilayer source/drain region and methods of manufacture (2024-10-29),

Title: The Visionary Inventor: Li-Li Su Pushing Technological Boundaries

Introduction:

Li-Li Su, an esteemed inventor hailing from Chubei, TW, is a true beacon of innovation with an impressive portfolio of 28 patents. His relentless passion for pushing the boundaries of technology has inspired inventors and researchers worldwide.

Latest Patents:

Among his latest patents is the groundbreaking method of "Source/drain formation with reduced selective loss defects," revolutionizing semiconductor manufacturing processes. Additionally, his work on "Source/drain regions of semiconductor devices" showcases his expertise in epitaxial growth techniques, further solidifying his reputation as a trailblazer in the industry.

Career Highlights:

Li-Li Su's career is highlighted by his tenure at Taiwan Semiconductor Manufacturing Company Limited (TSMC), a global leader in semiconductor manufacturing. His contributions to the company have been instrumental in driving forward technological advancements in the field.

Collaborations:

Throughout his career, Li-Li Su has collaborated with esteemed colleagues such as Chien-I Kuo and Chii-Horng Li. Together, they have worked on cutting-edge projects that have set new standards in the semiconductor industry.

Conclusion:

In conclusion, Li-Li Su stands as a visionary inventor whose remarkable innovations have left an indelible mark on the world of technology. His dedication to excellence and passion for innovation continue to inspire generations of inventors and researchers, cementing his legacy as a true pioneer in the field.

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